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Free sample bonding

Flip Chip Bonder

A19 FC

Up to 10,000 UPH @ 5 μm with a patented 12-head, dual-gantry design

XYθ global @3σ
±5 μm
Max UPH (no dip)
10,000
Bond heads
12
Wafer
8/12 in
ENG A19 FC Flip Chip Bonder

What it does

A19 FC is a high-throughput flip chip bonder. Each gantry picks 6 die at once and two gantries run in parallel; dipping is integrated. SECS/GEM, SMEMA and TCP/IP interfaces fit it into an automated line.

Suitable for

  • FCPGA, FCCSP and FCBGA
  • FC SOT, FC LGA and FC QFN
  • FR4/FR5, BGA, lead frame, MIS and ceramic substrates

Highlights

  • ±5 μm @3σ and ±0.05° @3σ global placement
  • Max 8,000 UPH with dipping, 10,000 UPH without, at 5 μm
  • Open/closed-loop bond force 50-3,000 g
  • Class 1,000 (ISO 6) cleanliness
  • Optional AOI pre-scan module, ±3 μm @3σ

A19 FC specifications

Manufacturer data, H1 2026. Throughput is under the stated standard conditions. Final values are confirmed in the technical agreement for your process.

XYθ global placement accuracy±5 μm @3σ, ±0.05° @3σ
Throughput (with dipping)Max 8,000 @ 5 μm
Throughput (no dipping)Max 10,000 @ 5 μm
Bond forceOpen/closed loop 50-3,000 g (50-100 g ±5 g; 100-3,000 g ±5%)
Die size0.5×0.5-11×11 mm (max 30×30 optional)
Die thickness50-2,000 μm
Wafer cassetteSingle; dual optional
Wafer size8/12 in
Wafer rotationAutomatic compensation
EjectorSingle or multi-needle, 6-needle library, automatic change
Bond heads6 per gantry, 12 total; 1 or 2 gantries optional
Nozzle changeAutomatic
Flip / face-upFlip; face-up optional
Transfer / bufferTransfer and buffer module, 6 die per gantry at once
DippingDepth 20-200 μm configurable; viscosity 2,800-110,000 cps
Substrate sizeL160-340 × W60-340 mm, thickness ≤6.0 mm
Substrate typesFR4/FR5, BGA, lead frame, MIS, ceramic
Substrate transfer3-section track, width 60-340 mm
Pre-scanAOI pre-scan module (optional), ±3 μm @3σ
Magazine handlingInput/output magazines (optional)
RecognitionFiducials (+, o, -, x, □), bad marks, bumps, edges
CleanlinessClass 1,000 (ISO 6)
CalibrationLocal / global automatic
Wafer mappingSECS/GEM
Line interfaceSMEMA
Network / protocolTCP/IP, SECS/GEM
CamerasBond head (down-look) 5 MP, 9.1×7.4 mm FOV; bottom (up-look) 25 MP, 16×16 mm FOV; wafer 2 MP, 6×6 to 31×31 mm FOV
Power3.5 kW (AC 220 V, 50/60 Hz)
Air0.5-0.7 MPa, 350 L/min; vacuum ≤-90 kPa, 250 L/min; dried and filtered
Footprint1,700 (L) × 1,690 (W) × 1,550 (H) mm (excl. monitor and tower light)
Weight2,600 kg (main unit)
InspectionInk-dot recognition, die-defect similarity recognition
SafetyDeionizer, light curtain at operator window
Access controlOperator / engineer permission levels; wafer map read & generate (optional)

Test your die on the A19 FC.

Send die and substrate samples or drawings. ENG engineers run a sample bonding and report placement accuracy and process results, free of charge.

  1. SendDie, substrate and target accuracy, under NDA if needed
  2. BondENG engineers run your parts on the matching machine
  3. ReportPlacement accuracy, process notes and a machine recommendation
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