High-Precision Eutectic Die Bonder

EX20

±1.5 μm @3σ eutectic die bonder for EML, LD and COC laser chips

XY accuracy @3σ: ±1.5 μm
Heating range: RT-450 ℃
Max ramp rate: >100 ℃/s
UPH, single die: ≥700

ENG EX20 High-Precision Eutectic Die Bonder

What it does

EX20 bonds die to substrate or carrier through a eutectic alloy by controlling temperature and pressure precisely. Two heating stations run alternately, and each eutectic profile stage, time, nozzle pressure, ramp rate and temperature, is set independently.

Suitable for

5G and datacom COC
High-power EML laser chips and LD laser diodes
MPD, resistors and capacitors
RF submounts

Eutectic die bonding Optical module die bonding

Highlights

±1.5 μm @3σ XY and ±0.2° @3σ angle
Dual bond-head structure: 3 pick-up heads, 2 eutectic heads, automatic nozzle change
Two heating stations running alternately, 10 × 10 mm effective heating area
Temperature accuracy ±5 ℃, RT-450 ℃, controllable ramp up to >100 ℃/s
180° die flip; dipping head and dipping plate included

EX20 specifications

Manufacturer data, H1 2026. Throughput is under the stated standard conditions. Final values are confirmed in the technical agreement for your process.

Max XY accuracy (local)	±1.5 μm @3σ
Angle (local)	±0.2° @3σ
Die size	0.2-5 mm
Die thickness	≥70 μm
UPH	≥700 pcs/hr (single-die bonding, excluding profile)
Die flip	180°
Bond force	Voice-coil, 20-50 g ±2 g / 50-300 g ±10%
Bond heads	Dual-head structure: pick-up ×3, eutectic ×2; automatic nozzle change
Wafer	4/6 in wafer ring ×2, replaceable with 4 in tray
Tray	2 in tray ×8
Track	Left-in right-out inline; rail width 60-200 mm (manual), working length 100-350 mm; rail height 1040 ±20 mm; magazine load/unload
Heating stations	2, alternating
Effective heating area	10 × 10 mm
Temperature control	±5 ℃, controllable ramp, max >100 ℃/s
Heating temperature	RT-450 ℃
Eutectic profile	Multi-stage: time, nozzle pressure, ramp rate and temperature each set independently
Process	Dipping head and dipping plate
Footprint	1300 × 1800 × 1900 mm
Weight	≈2200 kg (incl. granite frame and platform)
Inspection	Ink-dot recognition, die-defect similarity recognition
Safety	Deionizer, light curtain at operator window
Access control	Operator / engineer permission levels; wafer map read & generate (optional)

Process guides

AuSn eutectic die bonding: setting the process window for laser die

AuSn 80/20 eutectic die bonding for laser die: peak temperature, time at peak, ramp rate, atmosphere, preform size and placement, with public sources.